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| PD - 94440 IRG4PC60F-P INSULATED GATE BIPOLAR TRANSISTOR C Fast Speed IGBT VCES = 600V Features * Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. * Solder plated version of industry standard TO-247AC package. G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 60A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available. * IGBT's optimized for specified application conditions. * Solder plated version of the TO-247 allows the reflow soldering of the package heatsink to a substrate material. * Designed for best performance when used with IR HEXFRED & IR FRED companion diodes. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Maximum Reflow Temperature W Max. 600 90 60 120 120 20 200 520 210 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf*in (1.1N*m) 230 (Time above 183C should not exceed 100s) Units V A V mJ W C C Thermal Resistance Parameter RJC RCS RJA RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (Typical Socket Mount) Junction-to-Ambient (PCB Mount, Steady State)V Weight Typ. --- 0.24 --- --- 6 (0.21) Max. 0.24 --- 40 20 --- Units C/W g (oz) www.irf.com 1 04/26/02 IRG4PC60F-P Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage T 16 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.13 -- 1.5 VCE(ON) Collector-to-Emitter Saturation Voltage -- 1.7 -- 1.5 VGE(th) Gate Threshold Voltage 3.0 -- VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -11 gfe Forward Transconductance U 36 69 -- -- ICES Zero Gate Voltage Collector Current -- -- -- -- IGES Gate-to-Emitter Leakage Current -- -- V(BR)CES V(BR)ECS Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA VGE = 15V 1.8 IC = 60A -- IC = 90A See Fig.2, 5 V -- IC = 60A , TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 60A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 290 40 100 42 66 310 170 0.30 4.6 4.9 39 66 470 300 8.8 13 6050 360 66 Max. Units Conditions 340 IC = 40A 47 nC VCC = 400V See Fig. 8 130 VGE = 15V -- -- TJ = 25C ns 360 IC = 60A, VCC = 480V 220 VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ See Fig. 10, 11, 13, 14 6.3 -- TJ = 150C, -- IC = 60A, VCC = 480V ns -- VGE = 15V, RG = 5.0 -- Energy losses include "tail" -- mJ See Fig. 13, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, Rg = 5.0W. (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. T Pulse width 80s; duty factor 0.1%. Q U Pulse width 5.0s, single shot. V When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. W Refer to application note # 1023, "Surface Mounting of Larger Devices." 2 www.irf.com IRG4PC60F-P 80 70 60 Duty cycle : 50% Tj = 125C Tsink = 90C Ta = 55C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 73W for Heatsink Mount Power Dissipation = 3.5W for typical PCB socket Mount Load Current ( A ) 50 40 30 20 10 0 0.1 60% of rated voltage Ideal diodes 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 1000 T J = 150C IC , Collector t-to-Emitter Current (A) 100 IC, Collector-to-Emitter Current (A) 100 T J = 150C 10 10 1 T J = 25C VGE = 15V 20s PULSE WIDTH 0.0 1.0 2.0 3.0 4.0 5.0 1 T J = 25C VCC = 10V 5s PULSE WIDTH 0.01 4 5 6 7 8 9 10 11 0.1 0.1 0.01 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3 www.irf.com IRG4PC60F-P 100 3.0 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 VCE , Collector-to Emitter Voltage (V) 90 V GE = 15V VGE = 15V 80s PULSE WIDTH Maximum DC Collector Current (A) IC = 120A 2.0 IC = 60A IC = 30A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , Case Temperature (C) T J , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 ) thJC D = 0.50 0.1 Thermal Response (Z 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T J = P DM 0.001 0.00001 t1 / t 2 x Z thJC 0.1 +T C 0.0001 0.001 0.01 P DM t1 t2 1 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC60F-P 100000 VGE = 0V, f = 1 MHZ Cies = C + Cgc, C ge ce SHORTED Cres = C ce Coes = C + Cgc ce 20 V CC = 400V IC = 40A 10000 15 Capacitance (pF) Cies VGE, Gate-to-Emitter Voltage (V) 1000 10 Coes 100 5 Cres 10 0 100 200 300 400 500 0 0 50 100 150 200 250 300 VCE (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 8.00 VCC = 480V VGE = 15V TJ = 25C I C = 60A 100 RG = 5.0 VGE = 15V Total Switching Losses (mJ) Total Switching Losses (mJ) VCC = 480V IC = 120A 7.00 6.00 10 IC = 60A 5.00 IC = 30A 4.00 0 10 20 30 40 50 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G, Gate Resistance ( ) T J, Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC60F-P 30.0 RG = 5.0 TJ = 150C VGE = 15V VCC = 480V 20.0 1000 IC , Collector-to-Emitter Current (A) VGE = 20V T J = 125 Total Switching Losses (mJ) 100 SAFE OPERATING AREA 10.0 10 0.0 30 50 70 90 110 130 1 0.1 1 10 100 1000 IC , Collector Current (A) VDS , Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4PC60F-P L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4PC60F-P Case Outline and Dimensions -- TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7) -D- 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1 2 3 2X 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) -C- LEAD 1234- A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) * 3X C AS 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X L O N G E R L E A D E D (2 0m m ) V E R S IO N A V A IL A B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s ion s in M illim e te rs a n d (In c h es ) Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.04/02 8 www.irf.com |
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